孙海定 特任研究员

   孙海定博士现任中国科大微电子学院特任研究员，博士生导师，IEEE Senior Member。毕业于美国波士顿大学，博士期间师从氮化物半导体分子束外延（MBE）奠基人Theodore D. Moustakas教授，长期致力于MBE/MOCVD宽禁带III族氮化物（GaN等）和III族氧化物（Ga2O3等）半导体材料外延、紫外光电器件和电力电子器件设计与制备研究。主要研究半导体材料外延技术, 器件设计与工艺制造, 器件光、电性能表征与物理机制研究，涵盖光电子（LED, laser, photodetector等）和HEMT等电子功率器件。同时包括低维材料与器件（纳米线，量子点），二维/三维新型半导体异质结的材料生长和电子输运特性研究。并与工业界紧密合作（欧司朗OSRAM公司等），部分技术实现产业化。

       近五年来在半导体材料和光电、电子器件领域重要期刊，如Reports on Progress in Physics, Advanced Functional Materials, Nano Letters, Advanced Optical Materials, Nano Energy, ACS Photonics, Optica, IEEE Electron Device Lett., Appl. Phys. Lett., Opt. Express, Optics Letter等发表76篇论文（其中一作20篇，通讯作者29篇）。申请美国专利5项，国际专利8项，中国专利26项。在国际会议上做口头报告42次（8次特邀报告）。受邀撰写ELSEVIER出版社《Ultrawide Bandgap Semiconductors》书中题为“AlGaN-based thin-film ultraviolet laser diodes and light-emitting diodes”和“Controlling different phases of gallium oxide for solar-blind photodetector application”的两个章节，人民邮电出版社出版的《可见光通信新型发光器件原理与应用》书中题为“非极性和半极性面氮化镓激光器”的1个章节，均已经出版。相关工作受到同行和业界广泛关注，被国际科技媒体报道100余次，包括半导体行业权威杂志《Compound Semiconductor》（10次）、《Semiconductor Today》（5次）、欧洲最大电子工程杂志eeNews Europe（7次）、美国主流科技媒体Phys.org（7次），科研成果多次以周刊/月刊亮点新闻专题报道。受邀长期担任多个国际会议的分会联席主席，《Crystal》, 《Journal of Electronic Packaging》等SCI期刊客座编辑，Advanced Materials等80多家重要期刊审稿人。2014年在波士顿创立美国太阳能公司CloudSolar，被华尔街日报，波士顿环球时报，美国国家广播电台等报道。

代表论文：

1.      S. Fang, Haiding Sun* et al, Tuning the Charge Transfer Dynamics of the Nanostructured GaN Photoelectrodes for Efficient Photoelectrochemical Detection in the Ultraviolet Band，Adv. Funct. Mater. 2103007 (2021)

2.      H. Zhang, Haiding Sun* et al, Compositionally Graded III-Nitride Alloys: Building Blocks for Efficient Ultraviolet Optoelectronics and Power Electronics, Reports on Progress in Physics, 84(4), 044401 (2021)

3.      D. Wang, Haiding Sun* et al, Highly Uniform, Self-Assembled AlGaN Nanowires for  Self-Powered Solar-Blind Photodetector with Fast-Response Speed and High Responsivity, Advanced Optical Materials, 2000893, 2020.

4.      D. Wang, Ran Long, Yujie Xiong, Boon S. Ooi, Zetian Mi, Jr-Hau He, and Haiding Sun*, AlGaN/Pt Nanoarchitecture: Toward High Responsivity, Self Powered Ultraviolet-Sensitive Photodetection Nano Letters, 21(1), 120–129 (2021).

5.      C. Huang, Haiding Sun*, Ultraviolet Optoelectronic Devices Based on AlGaN-SiC Platform: Towards Monolithic Photonics Integration System, Nano Energy, 77, 105149 (2020)

6.      H. Zhang, and Haiding Sun* et al, Demonstration of AlGaN/GaN-based ultraviolet phototransistor with a record high responsivity over 3.6× 107 A/W. Applied Physics Letters, 118(24), p.242105 (2021)

7.      Yu, H, Haiding Sun* et al, AlGaN-based deep ultraviolet micro-LED emitting at 275 nm. Optics Letters 46(13), 3271-3274 (2021)

8.      Y. Qin, Haiding Sun*, Shibing Long*, and Ming Liu, Metal−Semiconductor−Metal ε‑Ga2O3 Solar-Blind Photodetectors with a Record-High Responsivity Rejection Ratio and Their Gain Mechanism, ACS Photonics 7(3), 812−820, 2020 (Cover Article杂志封面文章)

9.      K. Song, Houqiang Fu, Rajendra Singh, Yuji Zhao, Haiding Sun* and Shibing Long, Normally-off AlN/β-Ga2O3 field-effect transistors using polarization-induced doping. Journal of Physics D: Applied Physics.53, 345107, 2020

10.  Z. Ren, Haiding Sun* et al, “Band engineering of III-nitride-based deep-ultraviolet light-emitting diodes: A review”,Journal of Physics D: Applied Physics, 53, 073002, 2019